Marketing officer for GaN technology company

EpiGaN has appointed Markus Behet as Chief Marketing Officer for its GaN/Si and GaN/SiC epitaxy wafer product lines serving a host of innovative applications in the power switching and RF markets. In this newly created role Markus Behet will lead the company’s global commercial and marketing programs directly reporting to EpiGaN’s CEO Marianne Germain.

Markus Behet

The appointment signals a major strategic step for the company in the continuing expansion of its global marketing and sales activities in the rapidly proliferating GaN technology, which is continuously driven towards technology and process maturity by one of the world's leading GaN-on-Si wafer pioneers.

“EpiGaN is strongly committed to a leadership role in GaN-based wide-band-gap wafer technology as it enables a new generation of efficient power electronic devices and systems,” EpiGaN CEO Marianne Germain said. “Markus’ track record in global marketing and his deep III-V industry knowledge make him exceptionally well qualified for this newly created position. EpiGaN’s strong science-based foundation and leading-edge GaN epitaxy wafer technology are tailored to support the sustainable growth of innovative product solutions for global power and RF device manufacturers.”

"I am pleased and honored to be able to contribute to EpiGaN’s continued success,” Markus Behet said. “EpiGaN is a true technology leader with a differentiating epitaxy approach. EpiGaN’s GaN/Si and GaN/SiC wafer technologies will enable the power electronic industry to take the next step of innovation towards more efficient, higher performance and lower cost power devices and system solutions.”

Markus joins EpiGaN from Dow Corning, where he held global market segment positions for their SiC and GaN/Si wafer business. Prior to this, he has worked for Triquint Semiconductor, Infineon Technologies and Siemens, where he was in charge of various key marketing, business development and sales positions for GaAs-based RF power and foundry business lines. Earlier, Markus was R&D manager at imec, the world-renowned Belgian micro and nano-electronics research organization. Markus holds a PhD in semiconductor physics and electrical engineering from Aachen Technical University, Germany.

Wide band-gap GaN-based semiconductor devices offer superior performance vs. incumbent silicon or GaAs solutions in the realm of power switching and RF power applications. These properties make them ideally suited for highly efficient high-frequency and linear power electronic applications in the consumer, transportation, energy and RF markets. Integration of GaN device on Si substrates will leverage economies of scale and enable innovative solutions on low-cost, high-volume and large-diameter Si-processes.

EpiGaN is a Platinum Sponsor of the upcoming CS International (11 and 12 March 2015) in Frankfurt, Germany, addressing the worldwide compound semiconductor industry. EpiGaN will also exhibit at PCIM taking place May 19 to 21, 2015, in Nuremberg Germany.